Fabrication of double-dot single-electron transistor in silicon nanowire
نویسندگان
چکیده
منابع مشابه
Quantum measurement characteristics of a double-dot single electron transistor
Owing to a few unique advantages, the double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric c...
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2010
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.10.085